VO2薄膜的制备及表征.pdfVIP

电子元件与材料 Vo l.28 NO.2 第28 卷第2 期 ELECTRONIC COMPONENTS AND MATE RlALS Feb.2009 薄膜的制备及表征 V0 2 王燕，黄维刚 {四川大学材料科学与工程学院，四川 成都 610065 ) 薄膜主要的制备方法 摘要:综述了目前V0 ( sol-gel 法，蒸发法，脉冲激光沉积，溅射法和CVD) 及其优缺点; 2 以及 X 射线技术、光电子能谱、光谱技术、显很技术等农征乎段在 V0 薄膜研究中的应用.如何方便地获得准确 2 V0 ，获得结晶性好的薄膜结构以及与暴体间具有良好结合力的制备方法，是今后关泣的问题. 化学计量的 2 薄膜;综述;制备方法;农征 关键词:无机非金属材料; V0 2 : TN304.91 文献标识码:A 文章编号:1001-2028 (2009) 02俐0074刷04 中固分费号 Preparation and characterization technology of vanadium dioxide film WANG Yan , HUANG Weigang (College of Materia1s Science and Engineering, Sichuan Universi纱， Chengdu 610065, China) Abstract: Introduced was the preparing mehod of V02thin film including sol-gel method , evaporation meth叫， PLD， Sputtering meth创削d CVD. Advantage and shortcoming of these methods were also discussed. The strucωlre and properties of 伽e V02 thin films were characterized by X-ray analysis techniques, phoωelectric spectroscopy techniques, S阱C阳I analysis 阳hniques and micro叩ectroscopy analysis. lt remains to be fu巾er question that the preparation methods fOf 回到Iy 创ld accurately obtaining the V02 of stoichiometry，组1m with go