STS9D8NH3LL;中文规格书,Datasheet资料.pdf

STS9D8NH3LL Dual N-channel 30 V - 0.012 Ω - 9 A - SO-8 low on-resistance STripFET™ Power MOSFET Features Type VDSS RDS(on) Qg ID Q1 30V 0.022Ω 7nC 8A STS9D8NH3LL Q2 30V 0.015Ω 8nC 9A ■ Optimal RDS(on) x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced S0-8 Application ■ Switching applications Description Figure 1. Internal schematic diagram This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters. Table 1. Device summary Order code Marking Package Packaging STS9D8NH3LL 9D8H3LL- SO-8 Tape reel December 2007 Rev 3 1/14 14 / Contents STS9D8NH3LL Contents 1 Electrical ratings . . . .