SiCSiO2界面形貌对SiC MOS器件沟道迁移率的影响.pdfVIP

浙江大学学报{工学版) Vo l. 50 No.2 第 50 卷第 2 期 2016 年 2 月 Journal of Zhejiang University (Engineering Science) Feb. 2016 001: 10. 3785/j. issn. 1008-973X. 2016.02.027 SiC/Si0 界面形貌对 SiC MOS 器件 2 沟道迁移率的影晌 刘莉，杨银堂 (西安电子科技大学微电子学院，陕西西安 710071 ) 摘 要:为了研究 SiC/SiO，界面粗糙度对 SiC MOS 器件构道迁移率的影响，在离子注入后高温退火过程中采用 碳膜保护 SiC 表面以减小退火过程中产生的表面粗糙度，碳膜的形成通过对光刻胶在 600 c下前烘 30 min 实现. 研究结果表明:微结构分析所得的微米量级的横向表面粗糙度(峰对峰，谷对谷)不会影响电子平均自由程为纳米 数量级的沟道电子在 SiC MOS 器件沟道中的迁移运动，在高温退火过程中，碳膜的是否存在对表面粗糙度和 NMOS 电容 SiC/SiO，界面态密度没有影响，而且 NMOSFET 器件的场效应迁移率没有发生太大的变化. 关键词: SiC/SiO，界面粗糙度;界面态密度;场效应迁移率 中图分类号: TN 43 文献标志码:A 文章编号: 1008 - 973X(2016)02 一 0392 一 05 Effection of morphology of SiC/Si02 interface on mobility characteristics of MOS devices LIU Li , Y ANG Yin-tang (1 Microelectronics Institute ,Xi Dian University. Xi an Shaanxi 710071 China) Abstract: To investigate the effects of SiC/Si02 interface roughness on the mobility of 4H-SiC MOS capacitors and MOSFETs , carbon cap protection to the surface of SiC was used to reduce the surface roughness during high temperature annealing after ion implantation. Carbon cap is formed by annealing photo-resistant for 30min. 1 t is shown that because micro-scale lateral surface roughness (peak to peak/ valley to valley) does not affect the movement of channel electrons with nm scale mean free path in the SiC MOS channel , so in the duration of the high temperature annealing regardless of where there is carbon-cap existence or not and surface roughness is changed or not , the D ;, measured from NMO