IGBT基础.pptVIP

IGBT的应用 IGBT 虽然份额较小，但发展快速，从IGBT 耐压范围上看，电压在600V-1200V 之间的IGBT 用量最大，目前在电磁炉、电源、变频家电等产品中使用的IGBT 耐压一般都是600V和1200V。低于600V 的IGBT 产品主要使用在数码相机闪光灯和汽车点火器上。电压大于1200V 的IGBT 主要以1700V IGBT 为主，该产品在高压变频器等工业产品上广泛使用。 IGBT的主要生产厂商 IGBT的主要生产厂商有： INFINEON ，FAIRCHILD ，IR ，MITSUBISHI ， ON SEMICONDUCTOR ， FUJI ，TOSHIBA ，ABB，IXYS ， ST 等 IGBT Reverse Blocking Capability IGBT Reverse Blocking Capability IGBT Forward Blocking Capability IGBT Forward Blocking Capability Symmetrical Devices Symmetrical Devices Asymmetrical devices Asymmetrical devices Operation Mechanism Forward Conduction State Forward Conduction State PiN Rectifier/MOSFET Model PiN Rectifier/MOSFET Model PiN Rectifier/MOSFET Model PiN Rectifier/MOSFET Model PiN Rectifier/MOSFET Model PiN Rectifier/MOSFET Model PiN Rectifier/MOSFET Model PiN Rectifier/MOSFET Model PiN Rectifier/MOSFET Model PiN Rectifier/MOSFET Model Bipolar Transistor/MOSFET Model Bipolar Transistor/MOSFET Model Bipolar Transistor/MOSFET Model Bipolar Transistor/MOSFET Model Bipolar Transistor/MOSFET Model Bipolar Transistor/MOSFET Model Bipolar Transistor/MOSFET Model Bipolar Transistor/MOSFET Model On-state carrier distribution On-state Forward Voltage Parasitic thyristor latch-up Parasitic thyristor latch-up Parasitic thyristor latch-up Reduction the Gain of the P-N-P Transistor Reduction the Gain of the N-P-N Transistor Reduction the Gain of the N-P-N Transistor Reduction the Gain of the N-P-N Transistor Switching Characteristics Typical Capacitance vs. Collector-to-Emitter Voltage Gate Charge Transfer Curve Turn off An important characteristic of the IGBT is its gate turn-off capability. Since the current flowing through the MOS channel controls the output characteristics, the collector current flow can be interrupted by removing the gate drive voltage. When the gate voltage falls below the threshold voltage of the MOS gate structure, the channel inversion layer can no longer exist. At this point, the electron current (Ie) ceases. If the gate turn-