強誘電体の圧電形状誘電率屈折率のメモリ効果の創成.PDF

The Murata Science Foundation 強誘電体の圧電形状・誘電率・屈折率のメモリ効果の創成 Shape, permittivity and refractive index memory of ferroelectric materials A71157 代表研究者 森　田　　　剛 東京大学　新領域創成科学研究科　准教授 Takeshi Morita Associate Professor, The School of Frontier Sciences, The University of Tokyo 共同研究者 門　田　洋　一 東京大学　新領域創成科学研究科　修士2年 Yoichi Kadota Master course 2nd grade, The School of Frontier Sciences, The University of Tokyo 共同研究者 大　橋　俊　伯 東京大学　新領域創成科学研究科　修士2年 Toshinori Ohashi Master course 2nd grade, The School of Frontier Sciences, The University of Tokyo 共同研究者 尾　崎　智　也 東京大学　新領域創成科学研究科　修士2年 Tomoya Ozaki Master course 2nd grade, The School of Frontier Sciences, The University of Tokyo Ferroelectric materials, such as lead zirconate titanate (PZT) and lithium niobate are applied to various applications, because of their multifunctional properties. For example, by using the polarization orientation as 1-bit information, these materials have been intensively studied ferroelectric random access memories (FeRAMs). Utilization of their piezoelectric properties has led to the wide use of piezoelectric actuators for various applications. Par- ticularly in recent years, ferroelectric materials have been expected to be applied to MEMS (micro electro mechanical systems) devices because of their simple structure and high ener- gy density. However, there are some serious problems with the application of MEMS device to small wireless communication systems. Piezoelectric actuators require high input voltage and continuous driving voltage to maintain certain piezoelectric displacement, making it