材料科学与工基础作业讲评-8.pptVIP

4-41 在20 ℃时1m3内含有1021个电荷载体的半导体的电阻率为0.1Ω·m，如果在电场为0.15V·mm-1时可传导1A的电流，试计算电导的平均漂移速度 ?=nq?=nqv/E, so, v=?E/nq= E/(nq?) =150/[1021*1.6*10-19*0.1]=9.375m/s ? 载流子的迁移率，其物理意义为载流子在单位电场中的迁移速度。 英文书: 12.11 (a) Calculate the drift velocity of electrons in germanium at room temperature and when the magnitude of the electric field is 1000 V/m. (b) Under these circumstances, how long does it take an electron to traverse a 25 mm (1 in.) length of crystal? Solution: (a) v =? E=0.38m2.(Vs-1)?1000V/m =380m/s (b) 25mm/(380m/s)= 6.6? 10-5s 12.14:(a) Calculate the number of