利用射频磁控溅镀法制备钛酸铋铁电薄膜.doc

利用射頻磁控濺鍍法製備鈦酸鉍鐵電薄膜吳柏宗1、鄭建民1、陳開煌2 Bo-Tzung Wu1, Chien-Min Cheng1 ,Kai-Huang Chen2 1南台科技大學電子工程系 Department of Electronic Engineering,Southern Taiwan University 2東方學院電子與資訊系 Department of Electronic Engineering and Computer Science, Tung-Fang 摘要利用射頻磁控濺鍍法在ITO/glass基板上以室溫沉積Bi4Ti3O12鐵電薄膜，並改變其不同濺鍍參數，如氧氣濃度，來探討濺鍍參數對鐵電薄膜的影響。並藉由HP4294A阻抗分析儀和HP4156C半導體參數分析儀來量測Bi4Ti3O12薄膜的電容對電壓(C-V)的特性與漏電流密度對電壓(-V)的特性，另外利用RT66鐵電量測儀來量測Bi4Ti3O12薄膜之殘留極化量與矯頑電場(p-E)特性曲線。由實驗結果可知，以p-E來說，添加適當氧氣濃度可獲得40%為最佳氧氣比例的參數，殘留極化量為4μC/cm2與矯頑電場大約為3V和飽和極化量為5μC/cm2，當濺鍍功率為100W時，有較佳的殘餘極化量與矯頑電場大約為3μC/cm2及2V和飽和極化量為6 μC/cm2。關鍵詞：射頻磁控濺鍍法、鐵電薄膜、殘餘極化量、矯頑電場 Abstract In this study, the Bi4Ti3O12 ferroelectric thin films deposited at room temperature on ITO/glass substrates using rf magnetron sputtering were produced and investigated. The optimal sputtering conditions of as-deposited Bi4Ti3O12 thin films were found. The effect of oxygen concentration on the physical and electrical characteristics of Bi4Ti3O12 thin films was determined. For different oxygen concentrations, the capacitance and leakage current density were calculated by C-V and J-E. From polarization versus electrical field curves, when Oxygen ratio is 40% and power is 100W the Pr value and coercive field of Bi4Ti3O12 thin films are determined to be 3 μC/cm2 and 2 Volt, respectively. Keywords: rf magnetron sputtering, ferroelectric film, polarization, coercive field. 前言目前最常見的記憶體元件種類有SRAM、DRAM、EEPROM、Flash 等，其中以非揮發性的Flash memory 與EEPROM 元件更被廣泛的討論，尤其與Flash memory 相關的半導體製程技術更佔絕大多數。但是Flash memory 也有一些缺點，例如操作電壓太高、儲存容量不夠大與讀寫速度不夠快等。然而，目前正興起的另一種記憶體種類FeRAM 與MRAM 元件也開始被探討，其元件除了具有非揮發性之優點外，還具有其他的優點，像是寫入與讀取資料速度極快、工作電壓、工作電流、等候電流均極低、高積集度、高耐久性及抗輻射亦為其優點，同時也整合了DRAM 和Flash 的優點，勢必成為下個世代最有潛力的記憶體元件[1]。因此具有較高極化量的鐵電材料的研發，將是記憶體元件發展上極重要的課題之一。 一般沉積鐵電陶瓷薄膜的方式有下列幾種，如有機金屬化學汽相沉積法(Metal Organic Chemical Vapor Deposition,MOCVD) [,3]、有機金屬分解法(Metal Organic Deposition,MOD) []、電子槍蒸鍍法(Electron Beam Evaporation) []、反應性射頻磁控濺鍍法(RF Magnetron Sputtering) [,7]、脈衝雷射沉積(Pulsed Laser Deposition) []、電子迴旋共振離子束濺鍍(Electr