STD60NF06,创立翔科技.pdfVIP

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STD60NF06,创立翔科技

STD60NF06 N-CHANNEL 60V - 0.014Ω - 60A DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD60NF06 60 V 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 APPLICATION ORIENTED CHARACTERIZATION 1 DPAK (Suffix “T4”) DESCRIPTION This Power Mosfet series realized with STMicro- electronics unique STripFET process has specifical- ly been designed to minimize input capacitance and INTERNAL SCHEMATIC DIAGRAM gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 60 V VGS Gate- source Voltage ± 20 V I Drain Current (continuous) at T = 25°C

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