退火温度对Li掺杂ZnO薄膜光电特性的影响-JournalofNortheastern.PDFVIP

第33 卷第8期 东 北 大 学 学 报 ( 自 然 科 学 版 ) Vol33, No. 8 2 0 12 年 8 月 Journal of Northeastern U niversit ( Natural Science) Aug. 2 0 1 2 Li ZnO 李建昌, 李永宽, 姜永辉, 巴德纯 ( , 110819) : 3% Li ZnO , 450~ 650 n , 550 , ; , Li , p 600 , 550 , , 3 95% , 249 10 cm : ; ZnO ; Li ; ; : O 484. 4 : A : 1005-3026( 2012) 08- 1174-05 Effect of Post- Annealing Temperature on Optical and Electrical Properties of LiZnO Thin Films L I Jian-chang , L I Yong-kuan, JIA N G Yong-h ui, BA D e-ch un ( School of Mechanical Engineering Automation, Northeastern Universit , Shen ang 110819, China. Corresponding author : LI Jian-chang, associate professor , E-mail: jcli @ mail. neu. edu. cn) Abstract: 3 at . % L-i doped ZnO films w ere prepared b sol-gel spin-coating. The influence of pos-t annealing at 450 ~ 650 on the film structural, optical and electrical properties was investigated. All the films show a pol cr stalline hex agonal w urtzite structure and n-t pe conductivit . The rising annealing temperature facilitates the cr stallization and improves the transmittance and conductivit . How ever, b annealing above 550 , the film conductivit decreases and the oxide/ electrode contacts change from the Schottk to ohmic t pe. The intrinsic reason is the supplantation of the interstitial Li-dopants b the substitutional ones and therefore the ZnO w ork function increases, as confirmed b the I- U simulating results. At annealing temperatures above 600 , the samples are revaporised, resulting in poor optica-l electrical properties. The optimum annealing temperature is 550 , w ith a transmitta