藉由应力模拟与电性量测分析机械应力对可挠式薄膜电晶体之劣化机制.PDF

1 2 Analysis of the Degradation Mechanism of Thin Film Transistor after Undergoing Mechanical Stress by Using Mechanical Stress Simulation and Electrical Measurements 1 2 2 3 1 2 3 Abstract This study reports the degradation mechanism of low temperature polycrystalline silicon thin film transistors after undergoing mechanical stress, including both thermal expansion stress and mechanical bending stress. After understanding the exact degraded location of devices by electrical characteristics analysis, some means are proposed to alleviate the influence of mechanical stress. The availability of these means is clarified by using stress simulation tool.. Keywords Flexible Display Polycrystalline Silicon Thin Film Transistors Mechanical Stress NANO COMMUNICATION 24 No. 2 3 3 (3)TFT (4) TFT(1) N. Münzenrieder