用于神经信号再生的神经功能电压驱动电路.pdfVIP

Journal of Southeast University(English Edition) Vo1．23，No．4，PP．512—515 Dec．2007 ISSN l003—7985 1n 。 · ● l · ● ● ·● ● J● ● ● · unction electrical stlmUlan0n clrcuit —[or neural signal regeneration systeml ● l ■ W ang Jue · Li Wenyuan Wang Zhigong f Institute of RF一OE—ICs，Southeast University，Nanjing 2 1 0096，China) (：College of Integrated Circuits，Southeast University，Nanjing 210096，China) Abstract：A low—power．high—gain circuit for function electfica1 stimulation (FES) is designed for the microelectronic neura1 signal regeneration system based on CSMC(CSMC Technologies Corporation)0．6 p．m CM0S f complementary meta1一oxide—semiconductor transistor) technology．It can be used to stimulate mi croelectrodes connected with the nerve bundles to regenerate neura1 signals．This circuit consists of two stages：a full differential folded·-cascode amplifier input stage and a complementary class·-AB output stage with an overload protection circuit．The rai1一tO—rai1 input and output stages are used to ensure a wide range of input and output voltages．The simulation results show that the gain of the circuit is 81 dB；the 3 dB—bandwidth is 295 kHz．The chip occupies a die area of 1．O6 mm x 0．52 1TUTI．The on—wafer measurement results show that under a single supply voltage of+5 V．the DC power consumption is about 7．5 mW and the output voltage amplitude is 4．8 V．The chip can also Fun wel1 under single supply voltage of+3．3 V． Kev words：1ow—power；rail—to—rai1：neura1 signal：voltage drive After nerve bundles are injured，the upper or lower ing an