透明导电氧化物薄膜及其制备方法-材料工程
59
Development of Fabr icat ion M ethods for T rans parent
Conduct ive Oxide T hin Films
( , 541004
WA N G H ua ( Depart ment of Info rmat io n Mat erial Science and Engineering,
Guilin U niversit y of Elect ro nic T echnolo gy, Guilin 54 1004 , Guang xi, China
: ( T CO , -
T CO , T CO
,
: ; ; ; ;
: T N248. 1 : A : 100 1- 4 38 1( 2005 09- 0059- 05
Abstract: T he dev elo pments of t ransparent conduct ive oxide ( T CO met ho ds are described . T opics f o-
cused are mag net ron sputt ering, pulsed laser deposit ion, so-l g el, spray pyr olysis and f abr ication o n
flex ible substrat e. It is put fo rw ar d that t he fabricat io n met ho ds f or T CO t hin f ilms sho uld be im-
prov ed com bined w it h high o pt ical and elect rical propert ies, low fabricat ion temperat ure, low cost and
goo d adapt abilit y f or int egrat e cir cuit.
Key words: T CO; opt ical and electrical properties; fabrication method; flexible substrate; development tendency
( T ransparent Conduct ive Oxide, ,
T CO , 3eV , ( 1018 ~ 1021
, , cm- 3 , ( 10- 3 ~ 10- 4 8 # cm ,
( 80% ~ 90% ( 70%
) ) ) CdO 1907 Badeker[ 1] ,
, ;
, In, Sb, Zn Cd ( 3. 1eV ,
SnO2
, ,
In2 O3 20 50 , ZnO
,
[ 2]
20 80
Sn2 O : F ( FT O , In2 O3 : Sn ( IT O ZnO : A l ( ZA O
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