无线通信电子电路图全集.pdf

无线通信电子电路图全集 一．电池供电小夜灯电路--Battery-powered Night Lamp 1,R2___________1M 1/4W Resistors R3_____________47K 1/4W Resistor (optional: see Notes) R4____________Photo resistor (any type, optional: see Notes) C1____________100nF 63V Polyester Capacitor C2____________220΅F 25V Electrolytic Capacitor D1______________LED Red 10mm. Ultra-bright (see Notes) D2___________1N5819 40V 1A Schottky-barrier Diode (see Notes) IC1____________7555 or TS555CN CMos Timer IC B1_____________1.5V Battery (AA or AAA cell etc.) Device purpose: This circuit is usable as a Night Lamp when a wall mains socket is not available to plu g-in an ever running small neon lamp device. In order to ensure minimum battery con sumption, one 1.5V cell is used, and a simple voltage doubler drives a pulsating ultra- bright LED: current drawing is less than 500΅A. An optional Photo resistor switches-off the circuit in daylight or when room lamps illumi nate, allowing further current economy. This device will run for about 3 months continuously on an ordinary AA sized cell or fo r around 6 months on an alkaline type cell but, adding the Photo resistor circuitry, run ning time will be doubled or, very likely, triplicated. 1 Circuit operation: IC1 generates a square wave at about 4Hz frequency. C2 D2 form a voltage doubler, necessary to raise the battery voltage to a peak value able to drive the LED. Notes: IC1 must be a CMos type: only these devices can safely operate at 1.5V supply or less. If you are not needing Photo resistor operation, omit R3 R4 and connect pin 4 of IC 1 to positive supply. Ordinary LEDs can be used, but light intensity will be poor. An ordinary 1N4148 type diode can be used instead of the 1N5819 Schottky-barrier ty pe diode, but LED intensity will be reduced due to the higher voltage drop. Any Schottky-barrier type diode can be used in place of