卤化钾对硫掺杂ZnO荧光粉性能影响.docVIP

卤化钾对硫掺杂ZnO荧光粉性能的影响 李颖毅 （南昌大学 材料科学与工程学院，南昌 330031） 摘要将ZnS与硫、卤化钾等化合物共混，在高温箱式炉中煅烧，得到了具有硫掺杂ZnO荧光发射特征的绿色荧光粉。XRD衍射表明合成荧光粉的主晶相为ZnO。研究了混合物配方、助熔剂种类加量和煅烧温度对发光强度和产物中硫含量的影响，证明助熔剂KX的加入明显提高了发光强度，认为X-的共掺杂能有效地强化发光Cl-和Br-效果明显。Cl-的效果最佳，K+的掺杂有利于V*O的形成。灼烧温度在600700 ℃时荧光强度最高，而此时产物中的硫含量较为稳定。 关键词：卤化钾 ；ZnO；荧光粉； 硫,氯共掺O482. 31; O614. 33 文献标识码：A 文章编号：1007-7545（2012）02-0000-00 Effect of Potassium Halide on Properties of Sulfur-Doped Phosphor Based Zinc Oxide LI Ying-yi (School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China) Abstract: Chloride and sulfur co-doped ZnO phosphor was prepared by thermal oxidation of zinc sulfide under the assistant of potassium chloride in air atmosphere. The products were characterized with XRD and fluorescent spectrum. The main phase of phosphor was ZnO. It was observed that the photoluminescence (excitation and emission spectra) varied significantly with fluxing agent and calcination temperature. The fluxing agent KX was beneficial to enhance the emission intensity of ZnO phosphors, especially the KCl, and the best calcination temperature was 600~700 ℃. The study on the photoluminescence(PL) spectra of the ZnO phosphors revealed that the green luminescence intensity depended on both Zn+ sites and Vo+, which were formed on the calcinations process and influenced greatly by the co-doping of Cl, S. Key words: potassium halide; ZnO; phosphor; Co-doping of Cl, S ZnO是一种直接禁带半导体，禁带宽度Eg=3.2 eV，具有优良的光电性能。人们利用其紫外发射特性，广泛开展了紫光二极管和激光二极管的研究[1-2]。与传统硫化物荧光粉相比，ZnO还具有耐紫外线和高电导等优点[3]，具有广阔的应用前景。然而，将ZnO用作发光二极管转换材料的研究却很少。白光二极管是目前全科技与产业界竞相开发的节能固体光源，目前主要采用的是蓝光LED芯片+YAG：Ce黄色荧光粉的组合方式[4-6]。目前，ZnO：Zn绿色荧光粉是在还原气氛中高温煅烧含锌化合物来合成的。我们尝试将ZnS在空气中直接煅烧来制备硫掺杂ZnO荧光粉，但其荧光强度很弱，只有当将ZnS与卤化物共混后煅烧可得到具有强绿色发射的硫掺杂ZnO荧光粉，而且其激发光谱与近紫外发光二极管的光输出波长相匹配，可望用于白色发光二极管的制作。 1 试验 1.1 合成 将ZnS（荧光级）与KX按一定化学计量比称量在玛瑙研钵中充分研磨后，在高温箱式炉中于不同温度下煅烧3，设定升温时间为1。产物随炉冷却，于烧杯中用去离子水洗涤3次，每次洗涤时的液固比约为7∶1过滤干燥后备用。 1.2 表征 荧光粉的激发光谱和发射光谱用F4500荧光光谱仪荧光分析紫外-可见吸收光谱用U-3310样品中的硫含量由 HCS－878A)红外碳硫分析仪和HF2500高频感应燃烧炉测定Cl-含量由佛尔哈德法测