研一课件半导体器件物理MOSFETpart4概要1.ppt

Nonuniform doping Nonuniform doping Nonuniform doping Considering an idealized step-doping profile If xs is larger than Wm Nonuniform doping Nonuniform doping Considering the onset of strong inversion, Nonuniform doping Vt increased; WDm decreased; How can Vt shift biggest if dose is same? Nonuniform doping Integration of items: Nonuniform doping Low-High profile Similar deriving procedure Buried Channel Device The thickness of buried channel : xs- WDs-WDn WDs: thickness of surface depletion region WDn: thickness of bottom depletion region From the relationship between depletion width and the gate voltage: Buried Channel Device WDs can be obtained from p-n junction depletion width: Buried Channel Device Vt can be expressed as*: Buried Channel Device Buried channel device are normally–on device They can also be normally-off device They can have a more negative Vth The limitation of depletion region width Buried Channel Device A limitation for buried channel device Buried Channel Device Structure for MESFET or JFET To be discussed later Control of doping to WDm decreases in Physics? Single channel and double chanels * * Nonuniform doping Channel doping is uniform (above discussion) Nonuniformly doping is generally used (implant) to improve device performance 1. A shallow dopant at Si-SiO2 interface for threshold voltage adjustment; 2. A channel implant on a lightly doped substrate to reduce punch-through between source and drain. To reduce punch-through between source and drain In short channel device The depletion layer of p-n junction of drain is overlapped with that of source Barrier height lowered between S and D Big source-drain current even when VgsVth Related to NA and L Threshold voltage adjustment Introduce charges at SiO2/Si interface; This shifts the threshold voltage Vth to a slightly positive value; The amount of shift can be precisely controlled by the implant dose. Nonuniform doping High-low profile and Low-high profile However, If xs i