硅DRIE刻蚀工艺模拟研究.PDF

1 V o.l 6 No. 1 2011 2 Journa l of CA EIT F eb. 20 11 DRIE 朱福运, 于 民, 金玉丰, 张海霞 ( 北京大学微电子学研究院微米 /纳米国家重点实验室, 北京 100 871 : 随 现代科技的发展, 人们对微系统的小型化高性能多功能低功耗和低成本的要求越 来越高, 基于硅通孔技术技术的三维系统封装技术( 3D SiP, three dmi ensional dystem in packag ing 愈发显现出其重要的研究价值硅通孔技术将集成电路垂直堆叠, 在更小的面积上大幅地提升芯 片性能并增加芯片功能为帮助工艺人员更好地开展硅通孔技术工艺实验, 开展了硅通孔技术关 键工艺深反应离子刻蚀工艺模拟研究工作及开展这一工作所采用的物理模型和模拟方法, 并将模 拟结果与实验结果进行了对比 : 硅通孔技术; 深反应离子刻蚀; 工艺模拟 : TN 405 : A : 2011 0102 803 The Simulation Research ofDRIE Process ZHU Fuyun, YU M in, JIN Y ufeng, ZHANG H a ix ia ( Institu te o f m icro electron ics in P ek ing U niv ers ity, Be ijing 100 871, China Abstract: A long w ith the developm en t of m odern science and techno logy, people expect m ore o f the m in iaturizat ion, high perfo rm ance, mu lt ifunct ion, low pow er consum ption and low cost of m icrosystem. T he 3D S iP ( T hree D mi ensiona l System in P ackag ing based on T SV ( T hrough S ilicon V ia techno logy is be com ing m ore and m ore mi portant. TSV can greatly promo te ch ip perform ance and increase chip functions in sm a ller area by m eans o f the vertical stack of integrated circu it. T o he lp techno logy researchers to carry out TSV expermi ent, w e perform ed the smi ulat ion w ork on DR IE, wh ich is the key process of T SV tech nology. In this paper w e expla in the m ode lsw e adopted and the smi u lation results w ill be com pared w ith the expermi ent research. K ey words: TSV; DR IE; PECV D; process smi ulation; physical m odel , 0 ,