数字系统设计回顾digital system design summary.ppt

浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * 浙大数芯 * The classical SRAM cell looks like this. It consists of two back-to-back inverters that serves as a flip-flop. Here is an expanded view of this cell, you can see it consists of 6 transistors. In order to write a value into this cell, you need to drive from both sides. For example, if you want to write a 1, you will drive “bit” to 1 while at the same time, drive “bit bar” to zero. Once the bit lines are driven to their desired values, you will turn on these two transistors by setting the word line to high so the values on the bit lines will be written into the cell. Remember now these are very very tiny transistors so we cannot rely on them to drive these long bit lines effectively during read. Also, the pull down devices are usually much stronger than the pull up devices. So the first thing we need to do on read is to charge these two bit lines to a high values. Once these bit lines are charged to high, we will turn on these two transistors so one of these inverters (the lower one in our example) will start pulling one of the bit line low while the other bit line will remain at HI. It will take this small inverter a long time to drive this long bit line to low but we don’t have to wait that long since all we need to detect the difference between these two bit lines. And if you ask any circuit designer, they will tell you it is much easier to detect a “differential signal” (point to bit and bit bar) than to detect an absolute signal. +2 = 30 min. (Y:10) 浙大数芯 * 浙大数芯 * 长条框内的符号×表示一个二进制位(bit)。其中微命令字段用于操作控制；×编码为1时表示有微命令，×编码为0时表示无微命令。测试判别字段和下址字段一起实现顺序控制：当测试判别字段无效时(×编码为0)，下址字段信息即是下条微指令的地址；当测试判别字段有效时(×编码为1，可以有多个测试)，根据反馈线来的“状态”信息对下址字段信息进行修改，修改后的地址即为下条微指令的地址。 浙大数芯 * 微地址寄存器 存放下条微指令的地址，它可由带R和S端的D触发器组成，其中R端用来清除寄存器，S端用来强置1。后者可用来修改寄存器的内容。也可以不用强置端修改，由打入端分时打入修改内容。 地址转移逻辑 微码指令由ROM读出后直接给出下一条微指令的地址，这个地址就放在微地址寄存器中。如果当前微指令的测试字段Pi标明要测试判别时，意味着微程序出现分支，即出现条件转移。此时，通过测试标志Pi和执行部件反馈的“状态条