《Electronic Circuit Design1模拟电子技术》L19_07 BJTs 4 - CE Amplifier Pt II.pptVIP

The Ebers-Moll Equation The Ebers-Moll Equation for the Transistor Transistor Mutual Conductance Small-Signal Analysis Small-Signal Analysis In the active region the transistor operates with reasonable linearity as long as the signal swings are kept small. For this reason a study of the common-emitter transistor amplifier will begin with a small-signal analysis. A small-signal transistor model will be constructed and this will form the basis for the subsequent analysis. From now on, lower case letters will be used to denote quantities that vary with time (such as sinusoidal signals). Transistor Small-Signal Model The voltage - current equation for a p-n junction diode can be represented as: Is = diode reverse saturation current V = diode applied voltage q = charge on an electron; 1.6 x 10-19 Coulomb k = Boltzmann’s constant; 1.38 x 10-23 Joules.°K-1 T = Absolute temperature °K o 273 + oC h = material constant; 2 for silicon, 1 for germanium The equation for the transfer characteristic of a transistor can be represented as: IC = collector current IS = reverse saturation current VBE = emitter-base voltage q = charge on an electron; 1.6 x 10-19 Coulomb k = Boltzmann’s constant; 1.38 x 10-23 Joules.°K-1 T = Absolute temperature °K o oC + 273 VT = thermal voltage = kT/q = 26mV @ 300°K Differentiating the Ebers-Moll equation we get: The transconductance, gm, is defined as: and the following important result is obtained: At room temperature (T = 27 °C = 300 °K), VT = 26mV; \ gm = 39IC where gm is in milliSiemens (mS), IC is in mA This is true for any bipolar transistor at room temperature. e.g. T = 27 °C = 300 °K IC = 1mA, gm = 39mA/V IC = 10mA, gm = 390mA/V i.e. gm = 39 mA/V per mA of collector current IC So far, our discussion of transistor circuits has focused on dc or static conditions (e.g. determination of quiescent operating point, or dc bias point). We will now investigate the behaviour of the circuits when a sinusoidal o