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Fundamentals of zinc oxide as a semiconductor(氧化锌作为一种半导体的基础)
IOP PUBLISHING REPORTS ON PROGRESS IN PHYSICS
Rep. Prog. Phys. 72 (2009) 126501 (29pp) doi:10.1088/0034-4885/72/12/126501
Fundamentals of zinc oxide as a
semiconductor
Anderson Janotti and Chris G Van de Walle
Materials Department, University of California, Santa Barbara, CA 93106-5050, USA
E-mail: janotti@engineering.ucsb.edu and vandewalle@mrl.ucsb.edu
Received 10 February 2009, in final form 12 July 2009
Published 22 October 2009
Online at stacks.iop.org/RoPP/72/126501
Abstract
In the past ten years we have witnessed a revival of, and subsequent rapid expansion in, the
research on zinc oxide (ZnO) as a semiconductor. Being initially considered as a substrate for
GaN and related alloys, the availability of high-quality large bulk single crystals, the strong
luminescence demonstrated in optically pumped lasers and the prospects of gaining control
over its electrical conductivity have led a large number of groups to turn their research for
electronic and photonic devices to ZnO in its own right. The high electron mobility, high
thermal conductivity, wide and direct band gap and large exciton binding energy make ZnO
suitable for a wide range of devices, including transparent thin-film transistors, photodetectors,
light-emitting diodes and laser diodes that operate in the blue and ultraviolet region of the
spectrum. In spite of the recent rapid developments, controlling the electrical conductivity of
ZnO has remained a major challenge. While a number of research groups have reported
achieving p-type ZnO, there are still problems concerning the reproducibility of the results and
the stability of the p-type conductivity. Even the cause of the commonly observed
unintentional n-type conductivity in as-grown ZnO is still under debate. One approach to
address these issues consists of g
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