强磁场中での半导体シリコン单结晶の制造 - J-STAGE Journals.PDFVIP

2 解 説 強磁場 中での半導体シ リコン単結晶の製造 布施川 泉,太 田 友彦, 長 澤 繁 信越半導体(株)白河工場 福島県西白河郡西郷村大字小田倉字大平150 (1997年11月4日受理) Growth of Single-crystal Silicon Semiconductor under High Magnetic-field Conditions Izumi FUSEGAWA, Tomohiko OHTA and Shigeru NAGASAWA Shirakawa Plant, Shin-Etsu Handotai Co., Ltd., 150 Nishishirakawa, Fukushima 961 (Received November 4, 1997) Synopsis: Most of the large-scale integrated circuits (LSIs), indispensable at present day, are made from Si wafers grown by Czochralski (CZ) method. The size of LSIs continues to grow with the integra tion of more devices. The diameter of Si crystal has also been increasing to enable the production of large-size LSIs with practical productivity and cost. Generally, a large-diameter crucible is used to produce large single-crystal silicon with practical productivity. However, it is becoming difficult to control the convection of large amounts of silicon melt in large crucibles using the conventional CZ method. Magnetic field-applied CZ (MCZ) is one solution to control the convection of Si melt. There are several kinds of MCZ categorized by magnetic-field direction: horizontal (HMCZ), vertical (VMCZ), Cusp MCZ; and several types of magnets categorized by the magnetic-field generation method (electroconductive and superconductive). In this paper, out-lines of CZ produc tion for single-crystal silicon, MCZ equipment and MCZ production are reviewed. Keywords: LSI, single-crystal silicon, thermal convection, MCZ, superconductive magnet され大直径 のシ リコン単結晶の製造が可能 となった。 1. は じ め に