覆晶焊锡隆点之电性及电迁移效应探讨.PDF

行 隆 3/3) Electromigration and Electrical Properties of Flip Chip Solder Bump (3/3) NSC 93-2216-E-006-022 行94 年8 1 95 年7 31 林隆 立料 參劉 立料 95Pb5Sn Sn3Ag0.5Cu 兩 隆 流 3 2 95Pb5Sn 隆 15 流度5×10 A/cm Al/Ni(V)/Cu 隆易 金 流Ni(V) 流Cu-Sn 金 Cu-Ni-Sn 流度金 隆 Sn3Ag0.5Cu 隆論 流 流隆 (substrate) /金 under bump metal UBM 洞(Void) 隆 金 (UBM洞(Void) The electromigration-induced failure in the composite solder bump consisting of Sn-95Pb on the chip side and 63Sn-37Pb on the substrate side was studied. It was observed that failure occurred in the solder joints in a downward electron flow with UBM as cathode. The Pb atoms were found to move in the same direction as with the electron current flow. During electromigration, Ni in the Ni(V) layer dissolved into the Cu-Sn IMC to form the Cu-Ni-Sn ternary IMC. The vanadium in the Ni(V) was broken under current stressing of 1711 hours due to the completely consumed of Ni in the Ni(V) layer. The Sn-rich phase of the solder bumps showed gradual streaking and reorientation upon current stressing. The mechanism of reorientation of Sn-rich phases in the solder was discussed. Keyword95Pb5Sn Sn3Ag0.5Cu UBM Void 1.