模拟集成电路-电流缘拇基准源.ppt

模拟集成电路;1. 镜像电流源;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;2. 微电流源;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;3. 多路电流源;3. 电流源的改进;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;具有基极电流补偿的恒流源;MOS恒流源;Wilso恒流源;4.电流源作有源负载;4. 电流源作有源负载;恒流源电路 ;PNP基本恒流源及其改进电路 ;模拟集成电路;基准源电路;(1) BE结二极管的正向压降VBE, VBE=0.6~0.8V, 他的温度系数 ;;正向二极管基准电路;R1;齐纳二极管基准电路;(1) BE结二极管的正向压降VBE, VBE=0.6~0.8V, 他的温度系数 ;具有温度补偿的齐纳基准电路;负反馈基准源电路;偏置电压源和基准电压源电路 ;1.双极型三管能隙基准源;只要适当设计R2／R3和J1／J2，即??使在该温度下基准电压的温度系数接近零 ;输出接近为5V的能隙基准源 ;2.双极型二管能隙基准源 ;可以通过控制有效发射结面积比AEl／AE2或AE3／AE4及电阻比R2／R1来获得接近零温度系数的基准源 ;3. E／DNMOS基准电压源 ;耗尽型和增强型MOS的阈值;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;其温度系数决定于三个因素;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;Evaluation only. Created with Aspose.Slides for .NET 3.5 Client Profile 5.2.0.0. Copyright 2004-2011 Aspose Pty Ltd.;4. CMOS基准电压源 ;根据MOS晶体管次开启区电特性的理论分析, 当N沟MOSFET工作在次开启区时, 若其源极电压不为零, 则其漏电流可表示为 次开启区的饱和区 ;零温度系数的条件为