双栅动态阈值soi nmosfet数值模拟 simulation of a double-gate dynamic threshold voltage fully depleted silicon-on-insulator nmosfet.pdfVIP
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双栅动态阈值soi nmosfet数值模拟 simulation of a double-gate dynamic threshold voltage fully depleted silicon-on-insulator nmosfet
第27卷第1期 半导体学报 VoI27 No.】
2006年1月 CHINESEJoURNALoFSEMICoNDUCTORS Jan.2006
of
SimulationaDouble—GateThreshold
Dynamic Voltage
Silicon—on—InsulatornMoSFET
Depleted
FuJly
BiJinshun’,Wu HaiChaohe
Junfeng,and
(,邶f咖把D,肘I叭mkcfr。nf心.o㈣e^c口demyD,&I£nces,&玎溉1∞oz9,chf瑚)
Abstract:Anovel DGDTFDSolnMoSFETIs the mechanismisdLscussed.The
planar presented,andoperatlon
device characteristicswlth 4and n.wcllis
fabricationand arcsimulated Medici.The
processes Tsuprem back—gate
formed of ata an of andconnected
bvimplantationphosphorllsdosagcof3×10”cmqandenergy250keV d打cctly
toa n+ Thismcthodis withtheconventionalbIIlksllIcon
front-鼬tepolvsilicon comp】etelYcompatlble proc秭s
SimulationresultsshowthataDoDTFDSOInMoSFETnot rctainsthe ofaconvcntioⅡalFDSoT
only advanta窖es
ⅡMoSFETovera nMOSFETthatistheavoidanceofanomaIoussubthreshold
partiallvdepIctcd(PD)SoT
andkinkeffectsbutaIso abetter thana FDSoInMoSFET.
slope shows drivabilitvcOⅡventional
nMoSFET
Keywords:double.gate thrcshold;FDSoTl
structure;dynamic
EEACC:2560
1 Artjde
CLCnumber:TN386Docum锄tc埘e:A ID:0253—4177(2006)01一0035—06
ishardto thead.
source/bodv{unction.Itexpand
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