晶圆封装测试工序（Wafer packaging process）.docVIP

晶圆封装测试工序（Wafer packaging process） Wafer assembly test process First, IC detection 1. defect check Defect Inspection DR-SEM Microscopy (Defect Review Scanning Electron) Used to detect defects on the wafer, mainly dust particles, scratches, residues and other issues. In addition, it is necessary to detect defects in the deep submicron range of patterned printed wafers. In general, patterned wafer inspection systems illuminate the wafer surface with white light or laser light. The light diffracted from the wafer surface is then received by one or more sets of detectors, and the image is passed to the high functional software to eliminate the underlying pattern to identify and detect defects. 3. CD-SEM (Critical, Dimensioin, Measurement) Make accurate dimensional measurements of etched patterns. Two, IC package 1. package (Packaging) IC packaging according to the use of materials can be divided into ceramic (ceramic) and plastic (plastic) two, and the current commercial applications are mainly plastic structure. The plastic package in wire bonding as an example, the steps in sequence (die, saw) wafer cutting delam (die mount / die bond) (wire bond), welding wire, sealing glue (mold), shear / forming (trim / form), printing, electroplating (mark) (plating) and test (inspection). (1) wafer dicing (die, saw); The purpose of wafer cutting is to cut and separate one wafer (die) on the wafer before processing. For example: the production of 0.2 micron process technology, each eight inch wafer can produce nearly six hundred or more 64M micro. For wafer cutting, must first wafer, and then sent to the wafer cutting cutting machine. The finished grain is arranged on the adhesive tape in order, and the support of the frame avoids the collision between the wrinkle and the grain of the tape. (2) bond (die / Mount / die) The purpose of bonding is to place one grain on a wire rack and fix it with silver glue (epoxy). After the completion of the clay crystal wire frame through a transm