热丝化学气相沉积制备多晶硅薄膜的研究 deposition and characteristics of poly-silicon films by hot-wire cvd.pdfVIP

第5 期 电 子 元 件 与 材 料 Vol.25 No.5 2006 年5 月 ELECTRONIC COMPONENTS MATERIALS May 2006 研究与试制 R D 热丝化学气相沉积制备多晶硅薄膜的研究 刘韶华 刘艳红 吕博佳 温小琼 大连理工大学三束材料改性国家重点实验室 辽宁 大连 116024 摘要:采用热丝化学气相沉积技术制备了多晶硅薄膜 利用Raman XRD SEM 等检测手段 系统研究了沉积气 压 衬底温度 衬底与热丝间距离 衬底种类等实验参数对多晶硅薄膜晶态比 晶面择优取向 晶粒尺寸的影响 得 出优化条件 沉积气压42 Pa 衬底温度250 衬底与热丝间距离48 mm 在玻璃衬底上制备出晶态比X 90% 择 c 优取向为 111 横向晶粒尺寸为200~500 nm 纵向晶粒尺寸为30 nm 左右的优质多晶硅薄膜 关键词:无机非金属材料 热丝化学气相沉积 多晶硅薄膜 晶态比 择优取向 中图分类号: TB383 文献标识码:A 文章编号:1001-2028 2006 05-0023-04 Deposition and Characteristics of Poly-silicon Films by Hot-wire CVD LIU Shao-hua, LIU Yan-hong, LU Bo-jia, WEN Xiao-qiong (State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China) Abstract: Poly-Si films were deposited by hot-wire chemical vapor deposition, and film structural and morphological properties were characterized by Raman, XRD, and SEM. The effect of parameters, including gas pressure, substrate temperature, space between hot-wore and substrates, and the different kinds of substrates, on poly-Si structure were studied systematically. The results show that the high-quality poly-Si, with particles of 30 nm transverse size and 200~500 nm longitudinal size, 90% crystalline ratio, and preferred orientation of (111), can be deposited on glass substrate at the optimal parameters, 42