control of crystallinity in nanocrystalline silicon prepared by high working pressure plasma-enhanced chemical vapor deposition控制纳米晶体硅的结晶度由高工作压力plasma-enhanced化学汽相淀积.pdfVIP

Hindawi Publishing Corporation Advances in Materials Science and Engineering Volume 2012, Article ID 213147, 6 pages doi:10.1155/2012/213147 Research Article Control of Crystallinity in Nanocrystalline Silicon Prepared by High Working Pressure Plasma-Enhanced Chemical Vapor Deposition Jung-Dae Kwon,1 Kee-Seok Nam,1 Yongsoo Jeong,1 Dong-Ho Kim,1 Sung-Gyu Park,1 and Si-Young Choi2 1 Surface Technology Division, Korea Institute of Materials Science, Changwon, Gyeongnam 641-831, Republic of Korea 2 Advanced Characterization Analysis Group, Korea Institute of Materials Science, Changwon, Gyeongnam 641-831, Republic of Korea Correspondence should be addressed to Jung-Dae Kwon, jdkwon@kims.re.kr and Si-Young Choi, youngchoi@kims.re.kr Received 4 May 2012; Revised 24 July 2012; Accepted 24 July 2012 Academic Editor: Pavel Lejcek Copyright © 2012 Jung-Dae Kwon et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. The crystalline volume of nanocrystalline silicon (Si) films could be successfully controlled simply by changing the substrate scan speed at the high working pressure of 300 Torr. The Si crystalline volume fraction was increased from 30% to 57% by increasing the scan speed from 8 to 30 mm/s. When the Si film was prepared at a low scan speed (8 mm/s), Si crystals of size 5 nm grew homogeneously through the whole film. The higher scan speed was found to accelerate crystallization, and crystals of size up to 25 nm were deposited in the Si film deposited when the scan speed was 30 mm/s. 1. Introduction [3, 7–9]. Hydrogen radicals are known