characterization of electrical behavior of ba5hoti3v7o30 ceramic using impedance analysis描述电子的行为ba5hoti3v7o30陶瓷使用阻抗分析.pdfVIP

characterization of electrical behavior of ba5hoti3v7o30 ceramic using impedance analysis描述电子的行为ba5hoti3v7o30陶瓷使用阻抗分析.pdf

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characterization of electrical behavior of ba5hoti3v7o30 ceramic using impedance analysis描述电子的行为ba5hoti3v7o30陶瓷使用阻抗分析

Materials Sciences and Applications, 2012, 3, 390-397 /10.4236/msa.2012.36056 Published Online June 2012 (http://www.SciRP.org/journal/msa) Characterization of Electrical Behavior of Ba HoTi V O 5 3 7 30 Ceramic Using Impedance Analysis 1* 2 3 1 Kiran Kathayat , Anuradha Panigrahi , Arvind Pandey , Susmita Kar 1Department of Physics, North Orissa University, Baripada, India; 2Department of Physics, D.N. College, Itanagar, India; 3Depart- ment of Physics, North Eastern Regional Institute of Science Technology, Nirjuli, India. * * Email: kathayatkiran@yahoo.in, kathayatkiran@ Received March 12th, 2012; revised April 16th, 2012; accepted May 19th, 2012 ABSTRACT Polycrystalline sample of Ba HoTi V O was prepared using solid-state reaction technique. X-ray structural analysis 5 3 7 30 indicated a single-phase formation with orthorhombic structure. Microstructural study by SEM showed non-uniform distribution of grains over the surface of the sample. Impedance and modulus spectroscopy studies were carried out, as functions of frequency (42 Hz - 5 MHz) and temperature (RT-773K). The Nyquist plots clearly showed the presence of both bulk and grain boundary effect in the compound. Electrical phenomena in the material can appropriately be mod- eled in terms of an equivalent circuit with R, C and CPE in parallel. The fitting procedure used here allows us to deter- mine the value of R and C with good precision. Here R and R correspond to the resistance contributed from the grain 2 3 boundary and bulk, respectively. C and C

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