原创力文档dependence on the partial pressure of oxygen on the shift in the energy band-gap of cdo thin films in the visible region依赖的氧气分压的转变的能量带隙cdo薄膜在可见的地区.pdfVIP
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dependence on the partial pressure of oxygen on the shift in the energy band-gap of cdo thin films in the visible region依赖的氧气分压的转变的能量带隙cdo薄膜在可见的地区
Active and Passive Eiec. Comp., 2001, Vol. 24, pp. 57-61 (C) 2001 OPA (Overseas Publishers Association) N.V.
Reprints available directly from the publisher Published by license under
Photocopying permitted by license only the Gordon and Breach Science Publishers imprint,
member of the Taylor Francis Group.
DEPENDENCE ON THE PARTIAL
PRESSURE OF OXYGEN ON THE SHIFT
IN THE ENERGY BAND-GAP OF CdO
THIN FILMS IN THE VISIBLE REGION
M. A. GRADO-CAFFARO*, M. GRADO-CAFFARO
and S. L. SAPIENZA
C./Julio Palacios 11, 9-B, 28029-Madrid, Spain
(Received5 December 2000; In finalform 19 March 2001)
In this paper, the dependence on the partial pressure of oxygen of the shift in the energy
band-gap of CdO thin films for the visible region is investigated from the theoretical
point of view on an experimental basis. In our analysis, the role played by the depend-
ence of the carrier density upon the above pressure is emphasized.
Keywords: CdO thin films; Shift in the energy band-gap; Partial pressure of oxygen;
Visible region
1. INTRODUCTION
It is well-known that cadmium oxide is a semiconductor that behaves
as a very transparent material in the visible range. In addition, the
wide band-gap of this material allows us to consider CdO as a semi-
insulating oxide; a shift of 0.4 eV in this band-gap has been observed
(from 2.3eV to 2.7 eV) [1,2]. Certainly, the relevance of this shift is
manifest in order to perform a deep analysis of the physical behaviour
of the material in question with respect to the partial pressure of
oxygen involved in the growth of CdO crystals [1 3]. At this point, we
*Corresponding author.
tScientific consultant.
57
58 M.A. GRADO-CAFFARO et al.
can mention that in Ref. [
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