a new process for on-chip inductors with high q-factor performance高品质因数的片上电感的新过程的性能.pdfVIP

Hindawi Publishing Corporation International Journal of Microwave Science and Technology Volume 2010, Article ID 517187, 9 pages doi:10.1155/2010/517187 Research Article A New Process for On-Chip Inductors with High Q -Factor Performance ¨ ¨ ¨ Kevni Buyuktas, Klaus Koller, Karl-Heinz Muller, and Angelika Geiselbrechtinger Department Automotive/Industrial, Infineon Technologies AG, Am Campeon 1-12, D-85579 Neubiberg, Germany ¨ ¨ Correspondence should be addressed to Kevni Buyuktas, kevni.bueyuektas@infi Received 21 April 2010; Revised 21 June 2010; Accepted 3 August 2010 Academic Editor: Ichihiko Toyoda ¨ ¨ Copyright © 2010 Kevni Buyuktas et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. A novel technological method to improve the quality factor (Q) of RF-integrated inductors for wireless applications is presented in this paper. A serious reduction of substrate losses caused by capacitive coupling is provided. This is realised by removing the oxide layers below the coils with optimized underetching techniques. This special etching procedure is used to establish an environment in the inductor substructure with very low permittivity. A set of solid oxide-metal-columns placed below the metal windings stabilize the coil and prevent the hollowed out structure from mechanical collapse. The oxide capacitance is lowered significantly by the reduction of the permittivity εr from values around 4 to nearly 1. Capacitive coupling losses into sub