approximation of the bte by a relaxation-time operator simulations for a 50 nm-channel si diode近似的弛豫时间算子模拟耳背式的50 nm-channel硅二极管.pdfVIP

VLSI DESIGN (C) 2001 OPA (Overseas Publishers Association) N.V. 2001, Vol. 13, Nos. 1-4, pp. 349-354 Published by license under Reprints available directly from the publisher the Gordon and Breach Science Publishers imprint, Photocopying permitted by license only member of the Taylor Francis Group. Approximation of the BTE by a Relaxation-time Operator: Simulations for a 50 nm-channel Si Diode MARCELLO A. ANILEa’*, JOSE A. CARRILLOb’t, IRENE M. GAMBAc’ and CHI-WANG SHUd’ aDipartimento di Matematica, Universith di Catania, Italy; bDepartment ofMathematics, University of Texas at Austin, USA, CDepartment ofMathematics, University of Texas at Austin, USA; -dDivision ofApplied Mathematics, Brown University, Providence, RI 02912, USA In this work we present comparisons between DSMC simulations of the full BTE and deterministic simulations of a relaxation-time approximation for a nowadays size Si diode. We assume a field dependent relaxation time fitted to give the same drift speed (mean velocity) as DSMC simulations for bulk Si. We compute the density, mean velocity, force field, potential drop, energy and I-V curves of both models and plot the pdf of the deterministic relaxation-time model. We also compare the results to aug- mented drift-diffusion models proposed in the literature to approximate the relaxation time system in the quasi-ballistic regime. The quasi-ballistic and ballistic regi