tunnel contacts for spin injection into silicon the si-co interface with and without a mgo tunnel barrier—a study by high-resolution rutherford backscattering隧道联系人的自旋注入硅si-co接口,没有采用隧道的障碍是研究高分辨率卢瑟福背散射.pdfVIP

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tunnel contacts for spin injection into silicon the si-co interface with and without a mgo tunnel barrier—a study by high-resolution rutherford backscattering隧道联系人的自旋注入硅si-co接口,没有采用隧道的障碍是研究高分辨率卢瑟福背散射.pdf

tunnel contacts for spin injection into silicon the si-co interface with and without a mgo tunnel barrier—a study by high-resolution rutherford backscattering隧道联系人的自旋注入硅si-co接口,没有采用隧道的障碍是研究高分辨率卢瑟福背散射

Hindawi Publishing Corporation Advances in Materials Science and Engineering Volume 2012, Article ID 902649, 13 pages doi:10.1155/2012/902649 Review Article Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering S. P. Dash,1, 2 D. Goll,2, 3 P. Kopold,2 and H. D. Carstanjen2 1 Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96 Goteborg, Sweden

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