some investigations on the anisotropy of the chemical etching of and silicon plates in a naoh 35% solution. part iii determination of a database for the simulator tensosim and prediction of 2d etching shapes一些调查的化学腐蚀和硅的各向异性板在35%氢氧化钠溶液。.pdf

Active and Passive Elec. Comp. , 2003, Vol. 26(2), pp. 95–109 SOME INVESTIGATIONS ON THE ANISOTROPY OF THE CHEMICAL ETCHING OF (h k 0) AND (h h l) SILICON PLATES IN A NaOH 35% SOLUTION. PART III: DETERMINATION OF A DATABASE FOR THE SIMULATOR TENSOSIM AND PREDICTION OF 2D ETCHING SHAPES C. R. TELLIERa,b*, C. HODEBOURGb and T. G. LEBLOISa,b aLaboratoire de Chronome´trie Electronique et Pie´zoe´lectricite´ Ecole Nationale Supe´rieure de Me´canique et des Microtechniques 26 chemin de l’e´pitaphe, 25030 Besanc¸on ce´dex, France; bInstitut des Microtechniques de Franche-Comte´ Avenue de l’observatoire, 25030 Besanc¸on ce´dex, France (Received 3 September 2002; In final form 17 November 2002) The simulation of 2D etching shapes such as surface profiles and out-of-roundness profiles related to various (h k 0) and (h h l) silicon plates or cross-sections is studied. The theoretical basis of the simulation is presented. The database for the simulator TENSOSIM is determined from a systematic analysis of experimental 2D etching shapes. Emphasis is placed on difficulties encountered in the determination procedure. Theoretical 2D etching shapes are compared with experimental shapes. A correlation between polar plots of the dissolution slowness and corresponding theoretical shapes is established. So we can conclude that the accuracy of the proposed database is sufficient for the simulation of 2D etching shapes. Keywords : Silicon; Anisotropic etching; NaOH etchant; Tensorial and kinematic model; Simulator TENSOSIM 1 INTRODUCTION A previous work [1, 2] on the dissolution of (h k 0) and (h h l) silicon plates in a NaOH 35% solution has given evidence for a marked anisotropy of the chemical attack. In particular, geometrical features of etched surfaces and