scalable rfcmos model for 90？nm technology可伸缩rfcmos模型90 纳米技术.pdfVIP

Hindawi Publishing Corporation International Journal of Microwave Science and Technology Volume 2011, Article ID 452348, 16 pages doi:10.1155/2011/452348 Research Article Scalable RFCMOS Model for 90 nm Technology Ah Fatt Tong,1 Wei Meng Lim,1 Choon Beng Sia,2 Xiaopeng Yu,3 Wanlan Yang,1 and Kiat Seng Yeo1 1 School of EEE, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 2 Cascade Microtech Inc., Singapore Science Park II, Singapore 117586 3 Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China Correspondence should be addressed to Wei Meng Lim, wmlim@.sg Received 30 May 2011; Revised 8 September 2011; Accepted 12 September 2011 Academic Editor: Mattia Borgarino Copyright © 2011 Ah Fatt Tong et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. This paper presents the formation of the parasitic components that exist in the RF MOSFET structure during its high-frequency operation. The parasitic components are extracted from the transistor’s S-parameter measurement, and its geometry dependence is studied with respect to its layout structure. Physical geometry equations are proposed to represent these parasitic components, and by implementing them into the RF model, a scalable RFCMOS model, that is, valid up to 49.85 GHz is demonstrated. A new verification technique is proposed to verify the quality of the developed scalable RFCMOS model. The proposed technique can shorten the verification time of the scalable RFCMOS model and ensure that the coded scalable model file is error-free and thus more reliable to use. 1. Introduction