the chapman-enskog expansion and the quantum hydrodynamic model for semiconductor devices查普曼豆科格扩张和半导体器件的量子流体动力学模型.pdfVIP

VLSI DESIGN (C) 2000 OPA (Overseas Publishers Association) N.V. 2000, Vol. 10, No. 4, pp. 415-435 Published by license under Reprints available directly from the publisher the Gordon and Breach Science Photocopying permitted by license only Publishers imprint. Printed in Malaysia. The Chapman-Enskog Expansion and the Quantum Hydrodynamic Model for Semiconductor Devices CARL L. GARDNER*’t and CHRISTIAN RINGHOFER* Department ofMathematics, Arizona State University, Tempe, AZ 85287-1804 (Received 16 December 1998, In finalform 14 December 1999) A smooth quantum hydrodynamic (QHD) model for semiconductor devices is derived by a Chapman-Enskog expansion of the Wigner-Boltzmann equation which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. A dispersive quantum contribution to the heat flux term in the QHDmodel is introduced. Keywords: Quantum hydrodynamic model, moment expansion 1. INTRODUCTION t(w +mlul2n) +Vx [q + wu + 2Pu +mulul2n] + 2en (VxVtt) U This investigation is concerned with the derivation of a quantum hydrodynamic (QHD)model in the W +mlul2n 3nTo presence of discon