A Scalable Substrate Noise Coupling Model for (一个可伸缩的衬底噪声耦合模型).pdfVIP

A Scalable Substrate Noise Coupling Model for (一个可伸缩的衬底噪声耦合模型).pdf

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A Scalable Substrate Noise Coupling Model for (一个可伸缩的衬底噪声耦合模型)

A Scalable Substrate Noise Coupling Model for Mixed-Signal ICs Anil Samavedam Karti Mayaram Terri Fiez School of EECS Department of ECE Silicon Laboratories Inc. Washington State University Oregon State University Austin, TX 78735, USA Pullman, WA 99164, USA Corvallis, OR 97331, USA Abstract—A scalable macromodel for substrate noise coupling in heavily strate macromodel which scales directly with the separation, size doped substrates has been developed. This model is simple since it requires and shape of the contacts on a die can be used to generate a netlist only four parameters which can readily be extracted from a small number of device simulations or measurements. Once these parameters have been file for a circuit simulator given the layout and process informa- determined the model can be used for any spacing between the injection and tion as shown in Fig. 1. Such a model can offer insight into the sensing contacts and for different contact geometries. The scalability of the dependence of coupling on sizes, shapes and placement of differ- model with separation and width provides insight into substrate coupling ent structures on the die and can cut down on the overall design and optimization issues prior to and during the layout phase. The model is validated for a 2 m and a 0.5 m CMOS process where it is shown that the time. Further, such models can be used to optimize the placement simple model predicts the noise coupling accurately. Measurements from a of structures for improved isolation. chip fab

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