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A Scalable Substrate Noise Coupling Model for (一个可伸缩的衬底噪声耦合模型)
A Scalable Substrate Noise Coupling Model
for Mixed-Signal ICs
Anil Samavedam Karti Mayaram Terri Fiez
School of EECS Department of ECE
Silicon Laboratories Inc. Washington State University Oregon State University
Austin, TX 78735, USA Pullman, WA 99164, USA Corvallis, OR 97331, USA
Abstract—A scalable macromodel for substrate noise coupling in heavily strate macromodel which scales directly with the separation, size
doped substrates has been developed. This model is simple since it requires and shape of the contacts on a die can be used to generate a netlist
only four parameters which can readily be extracted from a small number
of device simulations or measurements. Once these parameters have been file for a circuit simulator given the layout and process informa-
determined the model can be used for any spacing between the injection and tion as shown in Fig. 1. Such a model can offer insight into the
sensing contacts and for different contact geometries. The scalability of the dependence of coupling on sizes, shapes and placement of differ-
model with separation and width provides insight into substrate coupling ent structures on the die and can cut down on the overall design
and optimization issues prior to and during the layout phase. The model is
validated for a 2 m and a 0.5 m CMOS process where it is shown that the time. Further, such models can be used to optimize the placement
simple model predicts the noise coupling accurately. Measurements from a of structures for improved isolation.
chip fab
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