第六章金属化（The sixth chapter is metallization）.docVIP

第六章金属化（The sixth chapter is metallization） The sixth chapter is metallization and multilayer interconnection technology Metal and metal materials 1. divide by function Part of the MOSFET gate electrode material MOSFET devices, plays an important role in the performance of the device. Interconnecting materials - connecting individual components of the same chip to a circuit module with certain functions. Contact materials - materials that come directly into contact with semiconductor materials and provide contact points externally connected. 2. commonly used metal materials: Al, Cu, Pt, Au, W, Mo and so on 3. atmospheric metallic materials: doped poly-Si, metal silicide (PtSi, CoSi), metal alloys (AuCu, CuPt, TiB2, ZrB2, TiC, MoC, TiN) The sixth chapter is metallization and multilayer interconnection technology Two. Basic requirements for metallization of integrated circuits 1. to P +, N + or poly-Si to form a low resistance ohm contact, that is, silicon / metal contact resistance as small as possible; 2. provide low impedance interconnects to increase the speed of the integrated circuit; 3. electromigration resistance; 4. good adhesion; 5. corrosion resistance; 6. easy to deposit and etch; 7. easy bonding; The insulation between the 8. layers is better than that of the other, i.e., a diffusion barrier is required. The sixth chapter is metallization and multilayer interconnection technology Three ohm contact 1. definition: metal - relative to the semiconductor body or series resistance, when the contact resistance of semiconductor contact can be ignored, the timing is called ohmic contact. 2., three important parameters: Work function: the energy difference between Fermi energy and vacuum energy level The work function of metal - Semiconductor work function WS WM. The Schottky barrier height is phi b: Phi B = WM-, Contact resistance RC:RC= (dV/dJ) v=0 Low doping: A*- Richard Xun constant Three ohm contact High doping:, 3. method of forming ohmic contacts Low barrier