a review of the cmos buried double junction (bdj) photodetector and its applications审查的cmos埋双结(英国)光电探测器及其应用.pdfVIP

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a review of the cmos buried double junction (bdj) photodetector and its applications审查的cmos埋双结(英国)光电探测器及其应用.pdf

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a review of the cmos buried double junction (bdj) photodetector and its applications审查的cmos埋双结(英国)光电探测器及其应用

Sensors 2008, 8, 6566-6594; DOI: 10.3390/s8106566 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Review A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications Sylvain Feruglio 1,*, Guo-Neng Lu 2, Patrick Garda 1 and Gabriel Vasilescu 3 1 University P. M. Curie – Paris 6, SYEL – BC 252, 4 Place Jussieu, 75252 Paris Cedex 05, France E-mail: patrick.garda@upmc.fr. 2 Institut des Nanotechnologies de Lyon (INL), CNRS UMR5270, University Claude Bernard Lyon 1, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France E-mail: guo-neng.lu@univ-lyon1.fr 3 City University London, DEEIE, UNESCO Chair, Northampton Square, London EC1V OHB, UK; E-mail:gabiv@neuf.fr * Author to whom correspondence should be addressed; E-mail: sylvain.feruglio@upmc.fr Received: 8 July 2008; in revised form: 4 September 2008 / Accepted: 17 October 2008 / Published: 23 October 2008 Abstract: A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modell