原创力文档high-temperature mems heater platforms long-term performance of metal and semiconductor heater materials高温mems加热器平台长期性能的金属和半导体加热器材料.pdfVIP
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high-temperature mems heater platforms long-term performance of metal and semiconductor heater materials高温mems加热器平台长期性能的金属和半导体加热器材料
Sensors 2006, 6, 405-419
sensors
ISSN 1424-8220
© 2006 by MDPI
/sensors
High-temperature MEMS Heater Platforms: Long-term
Performance of Metal and Semiconductor Heater Materials
Jan Spannhake 1,*, Olaf Schulz 1, Andreas Helwig 1, Angelika Krenkow 1, Gerhard Müller 1 and
2
Theodor Doll
1 Corporate Research Centre, EADS Deutschland GmbH, D-81663 München, Germany
2 Institute of Microtechnology Mainz, D-55129 Mainz, Germany
*
Author to whom correspondence should be addressed. Email: Jan.Spannhake@
Received: 12 July 2005 / Accepted: 24 March 2006 / Published: 7 April 2006
Abstract: Micromachined thermal heater platforms offer low electrical power consumption
and high modulation speed, i.e. properties which are advantageous for realizing non-
dispersive infrared (NDIR) gas- and liquid monitoring systems. In this paper, we report on
investigations on silicon-on-insulator (SOI) based infrared (IR) emitter devices heated by
employing different kinds of metallic and semiconductor heater materials. Our results
clearly reveal the superior high-temperature performance of semiconductor over metallic
heater materials. Long-term stable emitter operation in the vicinity of 1300 K could be
attained using heavily antimony-doped tin dioxide (SnO2 :Sb) heater elements.
Keywords: Hotplate, heater metallisation, high-temperature stability, electro-migration,
doped silicon, doped metal oxide, antimony doped tin oxid
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