图形反转工艺用于金属层剥离的研究.pdfVIP

　 Technology Column 　　 doi:10.3969/j.issn.1003-353x.2009.06.004 陈德鹅, 吴志明, 李伟, 王军, 袁凯, 蒋亚东 (电子科技大学 光电信息学院 电子薄膜与集成器 国家重点实验室, 成都610054) :研究了AZ-5214 胶的正、 负转型和形成适用于剥离技术的倒台面图形的工艺技术。用 扫描电镜和台阶仪 试制作出的光刻胶断面呈倒台面, 倾角约为60°, 胶厚1.4 μm。得到了优化 的制作倒台面结构的光刻胶图形的工艺参数:匀胶转速4 000 r/min, 前烘温度100 ℃, 时间60 s, 曝光时间0.3 s, 反转烘温度110 ℃, 时间90 s, 泛曝光时间2 s, 显影时间50 s。用金相显微镜 试了在优化工艺参数条件下制作的光刻胶图形的分辨率, 同时对图形反转机理进行了讨论。 :光刻;AZ-5214;剥离工艺;图形反转;断面模拟 :TN305　　:A 　　:1003-353X (2009)06-0535-04 Image Reverse Technique for Research of Metal Lift-Off Chen Dee, Wu Zhiming, Li Wei, Wang Jun, Yuan ai, Jiang Yadong (StateKey Laboratory of Electronic ThinFilms and IntegratedDevices, School of Optoelectronic Information, University of ElectronicScience and Technology of China, Chengdu 610054, China) Abstract:Transformation of AZ-5214 photoresist from positive to negative patterns and the technology of producing reversed-trapezoid shape were studied, which was suitable for exfoliation corrosion technique in manufacturing microelectronics devices.SEM and step profiler tests show the reversed-trapezoid shape of photoresist patterns is with 60°obliquity and photoresist thickness is 1.4 μm.Optimum parameters about preparation of reversed-trapezoid patterns are:coating rotation speed is 4 000 r/min, pre-bake is 100 ℃/60 s, exposure time is 0.3 s, reversal bake is 110 ℃/90 s, flood exposure time is 2 s, developing time is 50 s.Metalloscope was used to test the resolution of produced photoresist patterns in optimum parameters, also mechanisms of image reversewas discussed. Key words:optical lithography;AZ-5214;lift-off technology;image reverse;section analog EEACC:2550C