利用射频磁控溅镀法在ITO上镀BNTV薄膜之研究.DOCVIP

鈦酸鉍鈣鐵電薄膜於真空退火之特性研究 吳佳霖1,鄭環宜1,陳開煌*2, 鄭建民1 Huan-Yi Cheng1, Chia-Lin Wu1, Kai-Huang Chen*2, Chien-Min Cheng1 1南台科技大學電子工程所 Department of Electronic Engineering, Southern Taiwan University Tainan, Taiwan 2東方技術學院電子與資訊工程學系 Department of Electronic Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung, Taiwan (NSC 97-2221-E-272-001) *E-mail: d9131802@ 摘要 本研究利用法在/Si之基板上室溫沉積鐵電薄膜-E)與電容電壓之特性圖(C-V)是藉由HP4294A 阻抗分析儀和HP4156C 半導體參數分析儀來量測CBT薄膜的電容對電壓(C-V)特性漏電流密度對電(J-E)的特性In this study, thin films of CaBi4Ti4O15(CBT) with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15 thin films were crystallized in a conventional furnace annealing (CFA) under the temperature of 700 to 800°C for 1 h. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator-semiconductor (MFIS) structure.. Keywords: ferroelectric film, annealing, memory window, leakage current, sol-gel method 前言 一般常見之記憶體種類主要可以分成揮發性記憶體(Volatile memory)與非揮發性記憶體(Non-Volatile memort)。其中在揮發性記憶體可以分為動態隨機存取記憶體(DRAM)與靜態隨機存取記憶體(SRAM)。在特性上雖然具有讀寫速度快、積極度高等優點，但是卻沒有永久記憶的功能。而在非揮發性記憶體方面，目前主要以Flash memory為主，但是Flash memory在讀寫方面的速度不快，且可記錄的次數不夠多。在目前尺寸微縮技術也已達到極限。 目前新興其種類的記憶體鐵電隨機存取記憶體(Ferroelectric Random Access Memory, FRAM)、變阻式隨機存取記憶體 (Resistance Random Access Memory, RRAM) 磁性隨機存取記憶體 (Magnetic Random Access Memory, MRAM)元件也開始被研究探討，這些元件的優點具有非揮發性，寫入資料快等優點，這些非揮發性記憶體元件又以鐵電隨機存取記憶體(Ferroelectric Random Access Memory, FRAM)最受矚目(BLSFs)的結晶是一個呈現非等向的晶體結構。鉍層鐡電結構(BLSFs)的材料包括了SrBi2Nb2O9(SBN),Bi4Ti3O12 (B