功率快恢复二极管反偏ESD与雪崩耐量仿真.docx

DOI:10．13290/j．cnki．bdtjs．2015．01．005功率快恢复二极管反偏ESD与雪崩耐量仿真屈静1，吴郁1，刘钺杨2，贾云鹏1，匡勇1，李蕊1，苏洪源1(1.北京工业大学电子信息与控制工程学院，北京100124;2.国网智能电网研究院电工新材料及微电子研究所，北京100192)摘要:静电放电(ESD)失效与雪崩耐量是影响高压硅功率二极管，如功率快恢复二极管(FＲD)性能及可靠性的两个主要因素。利用ISETCAD平台，采用简明分段线性电流源，分别对功率FＲD反偏ESD过程及雪崩耐量进行仿真计算，讨论二者的共性和差异。结果表明，器件外端电压波形均经历过冲、负阻振荡和平缓发展三个阶段，对应器件内部的“过耗尽”、雪崩注入、载流子及电场分布涨落等复杂变化，差别在于反偏ESD造成的电压过冲更明显，且出现典型的U型电场分布，与雪崩耐量相比对器件造成的影响更剧烈。为改善器件在反偏ESD和雪崩耐量测试过程中的电流丝化问题，考察了结构参数对器件抗ESD能力和雪崩耐量的影响，发现提高n－区掺杂浓度和阳极表面浓度对提高抗ESD能力和雪崩耐量起到促进作用。关键词:快恢复二极管(FＲD);静电放电(ESD);雪崩耐量;电压过冲;雪崩注入中图分类号:TN313.4文献标识码:A文章编号:1003－353X(2015)01－0024－05SimulationofＲeverseBiasedESDandAvalancheＲuggednessofPowerFastＲecoveryDiodeQuJing1，WuYu1，LiuYueyang2，JiaYunpeng1，KuangYong1，LiＲui1，SuHongyuan1(1.CollegeofElectronicInformationandControlEngineering，BeijingUniversityofTechnology，Beijing100124，China;2.NewElectricalMaterials＆MicroelectronicsInstitute，StateGridSmartElectricalEngineering，Beijing100192，China)Abstract:Electrostaticdischarge(ESD)failureandavalancheabilityarethetwomajorfactorswhichaffectstheruggednessofhigh-voltagesiliconpowerbipolardevicese.gthepowerfastrecoverydiode(FＲD)．BasedontheISETCAD，simulationofpowerFＲDonreversebiasedESDandavalancheruggednesswererespectivelycalculatedbyusingsimplepiecewise-linearcurrent-sourcemodel．Thecommonnessanddifferencesbetweenthemwereanalyzedanddiscussed．Theresultsshowthattheterminalvoltagewaveformofthedeviceshavethreestagesincludingovershoot，negativeresistanceoscillationandstabledevelopment．Accordingly，theinsideover-depletion，avalancheinjectionandfluctuationofcarriersandelectricfielddistribution，etc．Thedifferenceisthattheover-shootvoltageofESDishigherandtheelectricfieldpresentsatypicalU-shapeddistribution．Asaresult，theeffectofESDonthedevicesismoreseverethanthatofavalancheruggedness．ToalleviatethecurrentfilamentattheconnerofpnjunctionduringreversebiasedESDandthetestofavalancheruggedness，theinfluenceofdeviceparametersonESDresistanceandavalancheruggednesswereinvestigated．Thesimulationresultsshowthatimprovingthedopingcon