InAsGaSbII类超晶格长波红外探测器的实时γ辐照效应研究.docVIP

InAs/GaSb II类超晶格长波红外探测器的实时γ辐照效应 靳 川1,2, 许佳佳1，黄爱波1，徐志成1，周易1，白治中1，王芳芳1，陈建新1*, 陈洪雷1，丁瑞军1，何力1 1． 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室，上海 200083; 2． 中国科学院大学，北京 100049 摘要：本文研究了InAs/GaSb II 类超晶格长波探测器的γ 辐照。在60Co源γ 辐照下器件的电流-电压（I-V）特性并未随辐照剂量的增大而发生显著的变化，100Krad (Si)辐照剂量下的零偏电阻相较辐照前的减小率仅为3.4%。结合不同辐照剂量下的实时I-V特性曲线和辐照停止后器件暗电流随时间的演化情况，对辐照所带来的器件性能的损伤以及微观损伤机理进行了分析。发现零偏压和小反向偏压下，辐照开始后电流即有明显增大，辐照损伤以暂态的电离效应为主导，器件性能可以在很短时间内恢复。而大反向偏压下器件暗电流的主导机制为直接隧穿电流，辐照所引入位移效应的影响使得暗电流随辐照剂量增大而减小，损伤需通过退火效应缓慢恢复，弛豫时间明显长于电离效应损伤。 关键词：长波红外探测器；InAs/GaSb II类超晶格；实时γ 辐照TN21 文献标识码: A Real-Time γ irradiation effects on long-wavelength InAs/GaSb Type II superlattice infrared detector Jin Chuan1,2, Xu Jia-Jia1, Huang Ai-Bo1, Xu zhi-Cheng1, Zhou Yi, Bai Zhi-Zhong1, Wang Fang-Fang1, Chen Jian-Xin1*，Chen Hong-Lei1，Ding Rui-Jun1，He Li1 (1: Key Laboratory of Infrared Imaging Materials and Detector, Shanghai Institute of Technical Physics, Chinese Academy of Sciences shanghai 200083, China 2: University of Chinese Academy of Sciences, Beijing 100049, China) Abstract: In this paper, the γ-irradiation effect on InAs / GaSb II superlattice long-wave detectors was studied. The detector has a good anti-radiation performance under the irradiation of 60Co γ-rays as the current-voltage (I-V) characteristics of the devices did not change significantly with the increase of the irradiation dose. And compared with the value before irradiation, the reduction rate of the zero-bias resistance was only 3.4% under the irradiation dose of 100Krad (Si). By combining the real-time I-V curves at different irradiation doses and the evolution of the dark current with time after the irradiation, the damage and the corresponding mechanism of the γ-irradiation were analyzed. At zero bias as well as small reverse bias, the current is obviously increased after irradiation. The radiation damage is dominated by the transient ionization effect, and the device performance can be recovered in a short time. While at large reverse bias, the main dark current mechanis