安徽大学电院微电子专业外语课件1.pptVIP

Basic MOS Device Physics We begin our study with the structure of MOS transistors and derive their I/V characteristics. Next, we describe second-order effects such as body effect, channel-length modulation, and subthreshold conduction. 注意body effect, channel-length modulation, subthreshold conduction Design of Analog COMS Integrated Circuit body effect, channel-length modulation,… body effect 衬底效应 体效应 channel-length modulation 沟道长度调制 subthreshold conduction 亚阈值传导  Design of Analog COMS Integrated Circuit Basic MOS Device Physics We then identify the parasitic capacitances of MOSFETs, der