ARM9(S3c2440)之十nand flash的读写操作程序实例.docxVIP

十??ARM9(2440)对nand?flash的读写操作程序实例转载自：骨Zi里德骄傲我相信上一篇文章已经对nand flash的操作有了一定的了解，下面一起看一下程序实例：#include include.hextern void Uart_Printf(char *fmt,...);extern void Uart_Init(int baud);//extern void Uart_Select(int ch);static void InitNandCfg(void){?rGPACON = (rGPACON ~(0x3f17)) | (0x3f17);??????????? //配置芯片引脚,因为GPACON复位后各位的值为1，所以此步也可没有?//TACLS为1个HCLK，TWRPH0为5个HCLK，TWRPH1为2个HCLK，数据宽度8位?rNFCONF = (TACLS12)|(TWRPH08)|(TWRPH14)|(00);?//禁止紧锁,软件禁止上锁，禁止非法访问中断，禁止RnB 中断，RnB检测上升沿，锁定备份ECC，锁定主数据区域ECC生成，初始化ECC 编码器/译码器，?//强制nFCE 为高（禁止片选）,NAND Flash 控制器使能?rNFCONT = (013)|(012)|(010)|(09)|(08)|(16)|(15)|(14)|(11)|(10);}static U32 WaitNFBusy(void)?// R/B 未接好?{?U8 stat;??WrNFCmd(QUERYCMD);//0x70,读状态命令?do?{??stat = RdNFDat();//读取NFDATA?}?while (!(stat0x40));//，第6位，判断是否在忙?WrNFCmd(READCMD0);//写页读命令周期0?return stat1;??? //注意0为操作成功}static U32 ReadChipId(void){?U32 id,k;??NFChipEn();?//使能片选?WrNFCmd(RdIDCMD);//读ID命令?WrNFAddr(0);//写入地址0?while(NFIsBusy());?//等待不忙?id? = RdNFDat()8;//应该是只读的厂商ID?for(k=0;k500;k++);//延时?id |= RdNFDat();//低8位为设备ID???NFChipDs();??//关闭片选??return id;//返回ID值}static U16 ReadStatus(void){?U16 stat;??NFChipEn();?//片选使能?WrNFCmd(QUERYCMD);?//读状态命令??stat = RdNFDat();?//读取状态值?NFChipDs();//关闭片选??return stat;}U32 EraseBlock(U32 addr)//输入参数是具体的页数，擦除的是页数所在的块{?U8 stat;?addr = ~0x3f;//为了将地址赋给A18~A19???NFChipEn();?//片选使能?WrNFCmd(ERASECMD0);?//擦除命令周期0??WrNFAddr(addr);//写地址写3个行周期A18~A19?WrNFAddr(addr8);//A20~A27?? ?WrNFAddr(addr16);//A28?WrNFCmd(ERASECMD1);?//?擦除命令周期1?stat = WaitNFBusy();//等待不忙?NFChipDs();//关闭片选??return ~stat;//返回1则操作成功}void ReadPage(U32 addr, U8 *buf)//并没有使用ECC校验{?U16 i;??NFChipEn();//片选使能?WrNFCmd(READCMD0);//读命令周期0?WrNFAddr(0);//写列地址A0~A7?WrNFAddr(0);//写列地址A8~A11?WrNFAddr(addr);//行地址A12~A19?WrNFAddr(addr8);//行地址A20~A27?WrNFAddr(addr16);//行地址A28?WrNFCmd(READCMD1);//读命令周期1?InitEcc();//复位ECC?WaitNFBusy();?for(i=0; i2048; i++)??buf[i] = RdNFDat();//读取数据存入buf中?NFChipDs();//关闭片选}U32 WritePage(U32 addr, U8 *buf){?U32 i, mecc;?U8 stat, tmp[7];???NFChipEn();?WrNFCmd(PROGCMD0);//页写命令