Compound Semiconductors By ST microelectornics英文课件.ppt

Compound Semiconductors RusNanoTech 2008 Russian-Italian Session Moscow, December 4th 2008 ST focusing on Fast Growing Markets Outline ST: RD towards Business Compound semiconductor market SiC Developments GaN developments Conclusions ST’s strong attitude to invest on Innovation ST – MIKRON Partnership in Russia STMicroelectronics Sitronics/Mikron: Top Russian Semiconductor Company have set-up in 2006 a Cooperation Agreement, unique of its kind, including both Business and Industrial Partnerships. Initial achievements: to provide Russian Market with world-class solutions in Smart-Card Applications (including SIM, E-passport, RFID, banking, etc.) to accumulate common marketing expertise on Russian Semiconductor market to build first 8’’ Wafer Fab Operations in Russia for sub-micron Technologies ( Logic , EEPROM,…) Outline ST RD towards Business Compound semiconductor market SiC Developments GaN developments Conclusions SiC/GaN applications with Total Avail Market @ 2012 Compound semiconductor devices in the power domain RF Power market and GaN RF applications Adoption scale SiC: Techno Status Roadmap Status 2008 Diode 600V on 3” Product Portfolio from 4A to 12A Forecast 2009 Diode 600V on 4” GaN: Techno Status Roadmap GaN 3” HeMT GaN on SiC for RF applications GaN on Silicon 6” Epi reactor is available and working Epi grown wafers are available GaN Power RF Basic cell GaN Power RF test-chip Characterization Ids @ Vgs= 2V 600mA/mm Breakdown Vdg ~ 90V Ids leak 1mA/mm for SiC substrate Ft/Fmax 15/10 GHz Dispersion phenomena in line with competition Aixtron MOCVD SYSTEM CCS Multiwafer GaN Reactor Better efficiency with GaN diodes Technology Benchmarking GAN Device targets GaN transistors to be adopted in power modules DC-DC power supplier Automotive power train for Electric-Vehicle Allow significant cost savings at system level (lighter smaller) Conclusions ST Global Strategic Alliances IMS group’s Fab Facilities in Catania (Ital