铸造多晶硅晶体生长速率对杂质分布的影响研究.doc

铸造多晶硅晶体生长速率对杂质分布的影响研究.doc

  1. 1、本文档共28页,可阅读全部内容。
  2. 2、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。
  3. 3、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载
  4. 4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
查看更多
铸造多晶硅晶体生长速率对杂质分布的影响研究

铸造多晶硅晶体生长速率对杂质分布的影响研究 摘 要 目前,铸造多晶硅是最主要的光伏材料,其结晶组织、缺陷、和杂质含量显著影响着太阳能电池的转换效率。杂质的浓度和分布是影响光电转换效率的重要因素。由于多晶硅锭的质量好坏主要取决于长晶过程中的固液界面形状及晶体生长速率大小,固液界面形状及晶体生长速率大小对定向凝固的排杂效果起决定作用,一般认为微凸的固液界面更有利于多晶硅杂质和位错的排除。因此深入研究多晶硅生长速率对杂质分布的影响,分析它对多晶硅锭结晶学及电学性能的影响,不仅有利于生长出高成品率的铸造多晶硅锭,而且可以降低铸造多晶硅硅片的制造成本。 本工作利用微波光电导衰减仪(μ-PCD)、二次离子质谱仪(SIMS) The investigation on the crystal growth rate of casting polycrystalline silicon influencing on the distribution of impurity ABSTRACT At present, casting polycrystalline silicon is the main PV materil. It affects are the important factors of photoelectric conversion efficiency.because quality of poolycrystalline silicon ingots is determined by the position of the solid/liquid interface and growth rate of crystal. The shape of solid/liquid interface and growth rate determined the quality of rejecting of impurity.Generally,small protruding liquid-solid interface is more advantageous to the reject of dislocation and impuritry.So further research on the influence of polysilicon growth rate on the impurity distribution and electrical behaviour of polycrystalline silicon ingots will help us improve the yield of the ingots and reduce the cost of casting polycrystalline silicon. In this thesis, we investigate the distribution of impurity and minority carrier lifetime of the ingots by Microwavephoto Conductive Decay(μ-PCD), ScanningInfrared Microscopy(IR), Scanning Infrared Microscopy(SIRM) . In the experiments, oxygen content increases in vetical direction, While carbon distribution is exactly thepposite. We find that low-speed solidification conditions is good to the reject of all the reject of all the metal inpurity,minority carrier lifetime is higher, but the casting cycle is longer. Whle High-speed solidification to the disadvantage of the reject of impurity. and its minority carrier lifetime is lower Experimen ts have found that poly ingot growth rate for 1.5 cm/h for industrial production is a better choice. KEY WORDS: casting polycrystalline silicon, impurit

文档评论(0)

feixiang2017 + 关注
实名认证
内容提供者

该用户很懒,什么也没介绍

1亿VIP精品文档

相关文档