Formation and growth mechanism of ripple-like AlN nanowires 语言教学方法论.pdf

Appl Phys A (2010) 99: 111–115 DOI 10.1007/s00339-009-5541-3 Formation and growth mechanism of ripple-like AlN nanowires Longhai Shen · Xuefei Li · Qiliang Cui · Bingbing Liu · Tian Cui Received: 13 July 2009 / Accepted: 19 November 2009 / Published online: 6 January 2010 © Springer-Verlag 2010 Abstract Single-crystal ripple-like AlN nanowire with cause the variation of the morphology and the crystallinity tuned diameter was fabricated through direct reaction alu- of the nanostructures will determine their electrical or op- minum with nitrogen by arc discharge method. The nano- tical properties. Furthermore, it can help us to fabricate a wires grow along the [0001] direction and have a radial ex- new type of nanoscale functional materials. Accordingly, ¯ pansion along the [1010] direction. The periodic variation of very recently, the hierarchical comb-like and multitipped ¯ the radial expansion toward [1010] direction produces the AlN nanostructures have been synthesized [ 11, 12], which ripple-like AlN nanowires. The growth mechanism of the have exhibited potential applications in field-emission and AlN nanowires is discussed by considering the Al adlayer optoelectronic nanodevices. diffusion on the polar (0001) surface. In the present study, we report the growth of a new type 1D AlN nanostructure by a vapor–solid (VS) process. The 1D AlN nanostructures have periodic variation in diame- 1 Introduction ter along the growth direction. Here, we define the 1D AlN