Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition.pdfVIP

Home Search Collections Journals About Contact us My IOPscience Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2006 Nanotechnology 17 5773 (/0957-4484/17/23/011) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 19 The article was downloaded on 20/04/2012 at 08:53 Please note that terms and conditions apply. INSTITUTE OF PHYSICS PUBLISHING NANOTECHNOLOGY Nanotechnology 17 (2006) 5773–5780 doi:10.1088/0957-4484/17/23/011 Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition 1,3 1 2 George T Wang , A Alec Talin , Donald J Werder , J Randall Creighton1 1 1 , Elaine Lai , Richard J Anderson and Ilke Arslan1 1 Sandia National Laboratories, PO Box 5800, MS-1086, Albuquerque, NM 87185, USA 2 Los Alamos National Laboratory, MS J567, Los Alamos, NM 87545, USA E-mail: gtwang@ Received 17 August 2006, in final form 28 September 2006 Published 10 November 2006 Online at /Nano/17/5773 Abstract We report the growth of exceptionally well aligned and vertically oriented ¯ GaN nanowires on (1102) r -plane sapphire wafers via metal–organic chemical vapour deposition. The nanowires were grown without the use of either a template or patterning. Transmission electro