Investigation of Drain Line Loss and the S22 Kink Effect in Capacitively Coupled Distributed Amplifiers英文文献.pdfVIP

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 53, NO. 12, DECEMBER 2005 3767 Investigation of Drain-Line Loss and the S22 Kink Effect in Capacitively Coupled Distributed Amplifiers Josef Shohat, Ian D. Robertson, Senior Member, IEEE, and Steve J. Nightingale, Fellow, IEEE Abstract— This paper investigates the practical limits of the ca- pacitively coupled distributed amplifier (DA) in terms of common- source output impedance. It is shown that the output impedance of the common-source device is considerably affected by the input coupling circuit. The 22 kink effect is more pronounced in the case of the capacitively coupled circuit. The effect on drain-line loss is very marked, and becomes the practical limitation of the tech- nique. The effect is clearly illustrated by practical measurements on a 45-MHz–20-GHz GaAs monolithic-microwave integrated-cir- cuit amplifier. The kink effect is also shown to be relevant to the output impedance and stability of the common-gate stage in the cascode DA topology. Index Terms—Distributed amplifiers (DAs), distributed parameter circuits, high electron-mobility transistor (HEMT), monolithic-microwave integrated-circuit (MMIC) amplifiers. I. INTRODUCTION HE ORIGINAL analysis of the field-effect transistor T(FET) distributed amplifier (DA) was based on the unilat- eral transistor model and neglected losses ( and ). Later, the discrepancies between the analysis and Fig. 1. Capacitively coupled DAs for higher power handling using: practical performance led researchers to gradually introduce (a) common-source and (b) cascode configuration. these effects into their analysis. First, was analyzed because it was easy to see its effect on the low-frequency response, while