原创力文档Potentialities of substrate thinning technique to control minority carrier injection in smart power ICs英文文献.pdfVIP
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Microelectronics Journal 37 (2006) 804–811
/locate/mejo
Potentialities of substrate-thinning technique to control minority carrier
injection in smart power IC’s
a,* ´ a,b,c b ´ b b
C. Lochot , J.P. Laine , M. Bafleur , A. Cazarre , J. Tasselli
a ´ ´
Technology Solutions Organization, Freescale Semiconductor, 134 Avenue du General Eisenhower, 31023 Toulouse Cedex, France
b LAAS/CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex 4, France
c Philips Semiconductor, Zurich, Switzerland
Received 3 June 2005; received in revised form 25 October 2005; accepted 31 October 2005
Available online 13 December 2005
Abstract
This paper deals with the evaluation of a substrate-thinning technique as a way to control the substrate current issues. A test structure has been
realized on a Smart Power Technology. Comprehension of the phenomena has been validated thanks to TCAD simulation. This technique was
then applied to a commercial IC and the authors show that they succeeded to reduce by one decade the collected current on a victim, although the
IC has already been optimized with classical solutions.
q 2005 Elsevier Ltd. All rights reserved.
Keywords: Substrate-thinning technique; Substrate current protection; Smart power; TCAD sim
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